 |
Os motores de busca de Datasheet de Componentes eletrônicos |
|
|
Os motores de busca de Datasheet de Componentes eletrônicos |
|
IRF6614TRPBF Folha de dados(PDF) 1 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF6614TRPBF Folha de dados(HTML) 1 Page - International Rectifier |
|
|
1 / 10 page  www.irf.com 1 5/5/06 DirectFET Power MOSFET DirectFET ISOMETRIC ST Fig 1. Typical On-Resistance Vs. Gate Voltage Typical values (unless otherwise specified) Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT Description The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra- red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro- cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6614PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6614PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket. 2.0 4.0 6.0 8.0 10.0 VGS, Gate-to-Source Voltage (V) 4 8 12 16 20 TJ = 25°C TJ = 125°C ID = 12.7A 0 102030 4050 QG Total Gate Charge (nC) 0 2 4 6 8 10 12 VDS= 32V VDS= 20V ID= 10.2A VDSS VGS RDS(on) RDS(on) 40V max ±20V max 5.9m Ω@ 10V 7.1mΩ@ 4.5V Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 10.2A. Notes: Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 10.2 Max. 10.1 55 102 ±20 40 12.7 22 PD -97090 IRF6614PbF IRF6614TRPbF l RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques |
Nº de peça semelhante - IRF6614TRPBF |
|
|
|
Ligação URL |
| Privacy Policy |
| ALLDATASHEETPT.COM |
| ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Portuguese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
