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IRF6631TRPBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRF6631TRPBF Folha de dados(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 05/29/06 IRF6631PbF IRF6631TRPbF DirectFET Power MOSFET PD - 97217 Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.24mH, RG = 25Ω, IAS = 10A. Notes: SQ SX ST MQ MX MT MP DirectFET ISOMETRIC SQ 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) 0 5 10 15 20 ID = 13A TJ = 25°C TJ = 125°C VDSS VGS RDS(on) RDS(on) 30V max ±20V max 6.0m Ω@ 10V 8.3mΩ@ 4.5V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 10 Max. 10 57 100 ±20 30 13 13 0 5 10 15 20 25 30 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 VDS= 24V VDS= 15V ID= 10A Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 12nC 4.4nC 1.1nC 10nC 7.3nC 1.8V l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Switching and Conduction Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Description The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6631PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert- ers that power high current loads such as the latest generation of microprocessors. The IRF6631PbF has been optimized for parameters that are critical in synchronous buck converter’s CtrlFET sockets. |
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