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08/25/06

IRF6662PbF

IRF6662TRPbF

DirectFET™ Power MOSFET

DirectFET™ ISOMETRIC

MZ

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage

Typical values (unless otherwise specified)

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

Repetitive rating; pulse width limited by max. junction temperature.

Notes:

SQ

SX

ST

MQ

MX

MT

MZ

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

V

Gate-to-Source Voltage

A

Pulsed Drain Current

Single Pulse Avalanche Energy

mJ

Avalanche Current

A

39

Max.

6.6

47

66

±20

100

8.3

4.9

Fig 2. Typical Total Gate Charge vs.

Gate-to-Source Voltage

4

6

8

10

12

14

16

VGS, Gate -to -Source Voltage (V)

0

20

40

60

80

100

ID = 4.9A

TJ = 25°C

TJ = 125°C

0

5

10

15

20

25

QG Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

VDS= 80V

VDS= 50V

VDS= 20V

ID= 4.9A

RoHs Compliant

Lead-Free (Qualified up to 260°C Reflow)

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

Description

the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual

sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6662PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom

applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device

coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability

improvements, and makes this device ideal for high performance isolated DC-DC converters.

D

G

S

S

D

100V max ±20V max

17.5m

Ω@ 10V

22nC

6.8nC

1.2nC

50nC

11nC

3.9V

PD - 97243A