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IRF7779L2TR1PBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRF7779L2TR1PBF Folha de dados(HTML) 1 Page - International Rectifier |
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1 / 11 page  www.irf.com 1 DirectFET Power MOSFET Typical values (unless otherwise specified) PD - 97435 IRF7779L2TRPbF IRF7779L2TR1PbF DirectFET ISOMETRIC L8 Applicable DirectFET Outline and Substrate Outline l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Industrial Qualified Description The IRF7779L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7779L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. 11/17/09 Fig 1. Typical On-Resistance vs. Gate Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.33mH, RG = 25Ω, IAS = 40A. Notes: Fig 2. Typical On-Resistance vs. Drain Current SB SC M2 M4 L4 L6 L8 D S G D S S S S S S S 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate-to-Source Voltage (V) 0.00 10.00 20.00 30.00 40.00 50.00 TJ = 25°C TJ = 125°C ID = 40A 50 70 90 110 ID, Drain Current (A) 8.00 12.00 16.00 20.00 TC= 25°C VGS = 7.0V VGS = 8.0V VGS = 10V VGS = 15V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f A ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 40 375 270 Max. 47 11 270 ±20 150 67 VDSS VGS RDS(on) 150V min ±20V max 9.0m Ω@ 10V Qg tot Qgd Vgs(th) 97nC 33nC 4.0V |
Nº de peça semelhante - IRF7779L2TR1PBF |
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Descrição semelhante - IRF7779L2TR1PBF |
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