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FCD620N60ZF Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
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FCD620N60ZF Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page ©2013 Fairchild Semiconductor Corporation FCD620N60ZF Rev. C3 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCD620N60ZF FCD620N60ZF DPAK Tape and Reel 330 mm 16 mm 2500 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - V VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25oC- 0.6 - V/oC BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 7.3 A - 700 - V IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 5 μA VDS = 480 V, TC = 125oC- - 20 IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±10 μA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA3 - 5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 3.6 A - 0.528 0.62 Ω Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz - 855 1135 pF Coss Output Capacitance - 625 830 pF Crss Reverse Transfer Capacitance - 30 45 pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 16 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 71 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 3.6 A, VGS = 10 V (Note 4) -20 36 nC Qgs Gate to Source Gate Charge - 4.5 - nC Qgd Gate to Drain “Miller” Charge - 7.7 - nC ESR Equivalent Series Resistance f = 1 MHz - 2.7 - Ω td(on) Turn-On Delay Time VDD = 380 V, ID = 3.6 A, VGS = 10 V, Rg = 4.7 Ω (Note 4) -15 40 ns tr Turn-On Rise Time - 7 24 ns td(off) Turn-Off Delay Time - 35 80 ns tf Turn-Off Fall Time - 10 30 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 7.3 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 21.9 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 3.6 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 3.6 A, dIF/dt = 100 A/μs -84 - ns Qrr Reverse Recovery Charge - 0.325 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 1.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 3.6 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. |
Nº de peça semelhante - FCD620N60ZF |
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Descrição semelhante - FCD620N60ZF |
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