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IRF7317TRPBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRF7317TRPBF Folha de dados(HTML) 1 Page - International Rectifier |
1 / 10 page N-Ch P-Ch VDSS 20V -20V RDS(on) 0.029Ω 0.058Ω N-Channel P-Channel Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS ± 12 TA = 25°C 6.6 -5.3 TA = 70°C 5.3 -4.3 Pulsed Drain Current IDM 26 -21 Continuous Source Current (Diode Conduction) IS 2.5 -2.5 TA = 25°C 2.0 TA = 70°C 1.3 Single Pulse Avalanche Energy EAS 100 150 mJ Avalanche Current IAR 4.1 -2.9 A Repetitive Avalanche Energy EAR 0.20 mJ Peak Diode Recovery dv/dt dv/dt 5.0 -5.0 V/ ns Junction and Storage Temperature Range TJ,TSTG -55 to + 150 °C HEXFET® Power MOSFET PD - 95296 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. 5/25/04 SO-8 l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated IRF7317PbF Description Thermal Resistance Ratings Parameter Symbol Limit Units Maximum Junction-to-Ambient RθJA 62.5 °C/W Continuous Drain Current Maximum Power Dissipation A W Symbol Maximum Units D1 N-CHANNEL MOSFET P-CHANNEL MOSFET D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) l Lead-Free |
Nº de peça semelhante - IRF7317TRPBF |
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Descrição semelhante - IRF7317TRPBF |
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