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2SC4385 Folha de dados(PDF) 2 Page - Savantic, Inc. |
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2SC4385 Folha de dados(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4385 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.2 A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 10 µA IEBO Emitter cut-off current VEB=6V; IC=0 10 µA hFE DC current gain IC=2A ; VCE=4V 50 180 fT Transition frequency IE=-0.5A ; VCE=12V 20 MHz hFE classifications O P Y 50-100 70-140 90-180 |
Nº de peça semelhante - 2SC4385 |
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Descrição semelhante - 2SC4385 |
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