BD2378 datasheet(3/4 Pages) UTC

Nome de Peças	BD2378

Descrição Electrónicos	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Fabricante Electrônico	UTC [Unisonic Technologies]

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BD2378

Preliminary

DUAL TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R230-001. a



ABSOLUTE MAXIMUM RATINGS (T

A=25

°C, unless otherwise specified.)

TR1

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

5

V

Continuous Collector Current

IC

2

A

Collector Dissipation

PC

1.25

W

Junction Temperature

TJ

150

°C

Storage Temperature Range

TSTG

-55~150

°C

TR2

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-100

V

Collector-Emitter Voltage

VCEO

-80

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-2

A

Collector Power Dissipation

Pc

1.25

W

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T

A=25

°C, unless otherwise specified.)

TR1

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=1mA, IE=0

100

V

Collector-Emitter Breakdown Voltage

BVCEO

IC=100mA, IB=0

80

V

Emitter-Base Breakdown Voltage

BVEBO

IE=1mA, IC=0

5

V

Collector Cut-Off Current

ICBO

VCB=100V, IE=0

100

µA

Emitter Cut-Off Current

IEBO

VEB=5V, IC=0

1

mA

Collector-Emitter Saturation Voltage

VCE(sat)

IC=1A, IB=100mA

0.6

V

DC Current Gain

hFE (1)

IC=150mA,VCE=2V

40

hFE (2)

IC=1A,VCE=2V

25

Transition Frequency

fT

IC=250mA, VCE=10V, f=10MHz

3

MHz

TR2

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

V(BR)CBO

IC=-1mA, IE=0

-100

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-100mA, IB=0

-80

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IC=-1mA, IE=0

-5

V

Collector Cut-Off Current

ICBO

VCB=-100V, IE=0

-100

µA

Emitter Cut-Off Current

IEBO

VEB=-5V, IC=0

-1

mA

DC Current Gain

hFE(1)

VCE=-2V, IC=-150mA

40

hFE(2)

VCE=-2V, IC=-1A

25

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-1A, IB=-100mA

-0.6

V

Transition Frequency

fT

VCE=-10V, IC=-250mA,

f=10MHz

3

MHz

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