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2SK2611 Folha de dados(PDF) 5 Page - Nell Semiconductor Co., Ltd |
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2SK2611 Folha de dados(HTML) 5 Page - Nell Semiconductor Co., Ltd |
5 / 6 page SEMICONDUCTOR Nell High Power Products RoHS RoHS www.nellsemi.com Page 5 of 6 160 120 80 120 200 500 0 0 40 60 2SK2611 Series 0 40 80 0 40 160 20 80 100 100 200 300 400 200 Common source I =9A D T =25°C C Pulse test V =100V DD VDS VGS 400V 200V Rectangular Pulse Duration , t1 (seconds) 0.1 1 1 10 100m 1m 100µ 10µ 0.003 PDM PDM t T Notes: 1. Duty = t / T 2. R =0.833 °C/W th(j-c) Single pulse D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.01 0.3 0.05 0.03 0.5 3 10m 30 10 100 300 3000 0.05 3 5 3 30 1000 50 *Single pulse T =25°C a Curves must be derated linearly with increase in temperaature. DC OPERATION T = 25°C C l max (pulse) D l max (continuous) D 100 µs 1 ms V max DSS 0.1 0.3 0.5 1 10 1000 800 600 400 200 0 25 50 75 100 125 150 Fig.12 Dynamic input/output characteristics Fig.11 Drain power dissipation vs. case temperature Case temperature, TC (°C) Total gate charge, Qg (nC) Fig.13 Transient thermal response curve Fig.15 Single pulse avalanche energy vs. Junction temperature Fig.14 Maximum safe operating area Drain-source voltage, VDS (V) Junction temperature, TJ (°C) 20 16 12 8 4 0 |
Nº de peça semelhante - 2SK2611 |
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Descrição semelhante - 2SK2611 |
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