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2SC3519B Folha de dados(PDF) 1 Page - Nell Semiconductor Co., Ltd

Nome de Peças 2SC3519B
Descrição Electrónicos  Silicon NPN Epitaxial Planar Transistor
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Fabricante Electrônico  NELLSEMI [Nell Semiconductor Co., Ltd]
Página de início  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

2SC3519B Folha de dados(HTML) 1 Page - Nell Semiconductor Co., Ltd

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FEATURES
Complement to type 2SA1386B & 2SA1386B-A
APPLICATIONS
SEMICONDUCTOR
RoHS
RoHS
Silicon NPN Epitaxial Planar Transistor
Nell High Power Products
2SC3519B Series
(Complement to type 2SA1386B)
Audio and general purpose
ABSOLUTE MAXIMUM RATINGS (T = 25°C)
a
UNIT
V
PC
I
(I
)
CP
CM
Tstg
PARAMETER
Collector to emitter voltage
ºC
5
1.04
20
15
Peak collector current
Collector current
Base current
Collector power dissipation
Junction temperature
Recommend for 105W high Fiderity audio frequency
180
180
130
4
VALUE
VCBO
Tj
-55 to 150
150
A
Collector to base voltage
Emitter to base voltage
SYMBOL
VCEO
VEBO
IC
IB
T = 25°C
C
Storage temperature
W/
°C
15.6±0.4
9.6
2
3
1.05
+0.2
-0.1
5.45±0.1
5.45±0.1
Φ3.2 0,1
±
4.8±0.2
2.0±0.1
0.65
+0.2
-0.1
1.4
B
C
E
1
2
3
Page 1 of 3
www.nellsemi.com
All dimensions in millimeters
NPN
C
B
E
amplifier output stage
2SC3519B 2SC3519B-A
160
160
UNIT
0.96
THERMAL CHARACTERISTICS (T =25
°C unless otherwise specified)
C
PARAMETER
Maximum thermal resistance, junction to case
SYMBOL
Rth(j-c)
VALUE
Derate above 25°C
°C/W
W
TO-3P(B)
15A/160V, 180V/130W


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