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2SC3519B Folha de dados(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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2SC3519B Folha de dados(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 3 page FEATURES Complement to type 2SA1386B & 2SA1386B-A APPLICATIONS SEMICONDUCTOR RoHS RoHS Silicon NPN Epitaxial Planar Transistor Nell High Power Products 2SC3519B Series (Complement to type 2SA1386B) Audio and general purpose ABSOLUTE MAXIMUM RATINGS (T = 25°C) a UNIT V PC I (I ) CP CM Tstg PARAMETER Collector to emitter voltage ºC 5 1.04 20 15 Peak collector current Collector current Base current Collector power dissipation Junction temperature Recommend for 105W high Fiderity audio frequency 180 180 130 4 VALUE VCBO Tj -55 to 150 150 A Collector to base voltage Emitter to base voltage SYMBOL VCEO VEBO IC IB T = 25°C C Storage temperature W/ °C 15.6±0.4 9.6 2 3 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 Φ3.2 0,1 ± 4.8±0.2 2.0±0.1 0.65 +0.2 -0.1 1.4 B C E 1 2 3 Page 1 of 3 www.nellsemi.com All dimensions in millimeters NPN C B E amplifier output stage 2SC3519B 2SC3519B-A 160 160 UNIT 0.96 THERMAL CHARACTERISTICS (T =25 °C unless otherwise specified) C PARAMETER Maximum thermal resistance, junction to case SYMBOL Rth(j-c) VALUE Derate above 25°C °C/W W TO-3P(B) 15A/160V, 180V/130W |
Nº de peça semelhante - 2SC3519B |
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Descrição semelhante - 2SC3519B |
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