January 2014

Thermal Characteristics

FQD1N80 / FQU1N80

800 V, 1.0 A, 20 Ω

Description

©2009 Fairchild Semiconductor Corporation

FQD1N80 / FQU1N80 Rev. C2

www.fairchildsemi.com

1

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

Features

• Low Gate Charge (Typ. 5.5 nC)

• Low Crss (Typ. 2.7 pF)

• 100% Avalanche Tested

Symbol

Parameter

FQD1N80TM /

FQU1N80TU

Unit

Thermal Resistance, Junction to Case, Max.

2.78

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

110

50

Symbol

Parameter

FQD1N80TM / FQU1N80TU

Unit

Drain-Source Voltage

800

V

Drain Current

1.0

A

0.63

A

Drain Current

- Pulsed

(Note 1)

4.0

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

90

mJ

Avalanche Current

(Note 1)

1.0

A

Repetitive Avalanche Energy

(Note 1)

4.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.0

V/ns

2.5

W

45

W

- Derate above 25°C

0.36

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering,

1/8" from case for 5 seconds

300

°C

G

D

S

I-PAK

D-PAK

G

S

D

G

S

D