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2SC3585-T1B Folha de dados(PDF) 4 Page - NEC

Nome de Peças 2SC3585-T1B
Descrição Electrónicos  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
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Fabricante Electrônico  NEC [NEC]
Página de início  http://www.nec.com/
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2SC3585-T1B Folha de dados(HTML) 4 Page - NEC

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4
2SC3585
S-PARAMETER
50
00
60
70
80
90
100
110
120
130
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.17
0.15
0.13
0.11
0.09
0.07
0.33
0.35
0.37
0.39
0.41
0.43
50
10
6.0
4.0
3.0
0.2
0.4
0.6
0.8
1.0
0.3
0.2
0.1
0.2
0.8
0.6
0.4
0.4
REACTANCE COMPONENT
(
R
––––
ZO )
EN
T
20
S11e, S22e-FREQUENCY
S21e-FREQUENCY
90
°
0
°
30
°
−30°
60
°
−60°
180
°
150
°
−150°
120
°
−120°
−90°
4
0
8
12
16
20
S21e
0.2 GHz
0.2 GHz
1.0 GHz
1.0 GHz
2.0 GHz
2.0 GHz
IC = 3 mA
IC = 10 mA
90
°
0
°
30
°
−30°
60
°
−60°
180
°
150
°
−150°
120
°
−120°
−90°
0.04
0
0.08
0.12
0.16 0.20
S12e
2.0 GHz
IC = 10 mA
IC = 3 mA
S12e-FREQUENCY
VCE = 6 V
200 MHz Step
CONDITION
VCE = 6 V
CONDITION
VCE = 6 V
CONDITION
2.0
GHz
2.0 GHz
0.2 GHz
0.2 GHz
IC = 3 mA
S11e
S22e
S22e
IC = 10 mA
0.2 GHz


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