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2SC4187 Folha de dados(PDF) 1 Page - NEC

Nome de Peças 2SC4187
Descrição Electrónicos  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
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©
1996
DATA SHEET
SILICON TRANSISTOR
2SC4187
DESCRIPTION
The 2SC4187 is designed primarily for use in low voltage and low
current application up to UHF band. The 2SC4187 is ideal for pagers,
electro-optic detector postamplifier applications, and other battery pow-
ered systems. Super mini mold package makes it suitable for use in small
type equipments such as HICs.
FEATURES
Low Noise : NF = 3.0 dB TYP. @VCE = 1 V, IC = 250
µA, f = 1.0 GHz
High Gain : |S21e|2 = 6.5 dB TYP. @VCE = 1 V, IC = 1 mA, f = 1.0 GHz
Small Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
8V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
5mA
Total Power Dissipation
PT
50
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Characteristic
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Collector Cutoff Current
ICBO
0.1
µAVCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
0.1
µAVEB = 1 V, IC = 0
DC Current Gain
hFE
50
100
250
VCE = 1 V, IC = 250
µA, pulsed
Gain Bandwidth Product
fT
4.0
GHz
VCE = 1 V, IC = 1 mA, f = 1 GHz
Feedback Capacitance
Cre
0.5
0.7
pF
VCB = 1 V, IE = 0, f = 1 MHz
Insertion Power Gain
|S21e|2
4.0
6.5
dB
VCE = 1 V, IE = 1 mA, f = 1 GHz
Noise Figure
NF
3.0
4.5
dB
VCE = 1 V, IC = 250
µA, f = 1 GHz
hFE Classification
Class
R6A
R6B
R6C
Marking
R6A
R6B
R6C
hFE
50 to 100
80 to 160
125 to 250
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer any damage due to those voltages or fields.
PACKAGE DIMENSIONS
in millimeters
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
2.1 ±0.1
1.25 ±0.1
2
1
3
Marking
1. Emitter
2. Base
3. Collector
Document No. P10370EJ3V0DS00 (3rd edition)
Date Published February 1996 P
Printed in Japan


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