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IRF3805PBF Folha de dados(PDF) 1 Page - Vishay Siliconix |
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IRF3805PBF Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 12 page 07/23/10 www.irf.com 1 HEXFET® Power MOSFET VDSS = 55V RDS(on) = 3.3mΩ ID = 75A This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitiveavalancherating.Thesefeaturescombine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S D G Description l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Features IRF3805PbF IRF3805SPbF IRF3805LPbF D2Pak IRF3805SPbF TO-220AB IRF3805PbF TO-262 IRF3805LPbF Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energy d mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Currentà A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw i Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.5 l °C/W RθCS Case-to-Sink, Flat Greased Surface i 0.50 ––– RθJA Junction-to-Ambient ik ––– 62 RθJA Junction-to-Ambient (PCB Mount) jk ––– 40 940 650 See Fig.12a, 12b, 15, 16 300 2.0 ± 20 Max. 210 150 890 75 -55 to + 175 300 (1.6mm from case ) 10 lbf yin (1.1Nym) PD - 97046A |
Nº de peça semelhante - IRF3805PBF |
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Descrição semelhante - IRF3805PBF |
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