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IRF5210STRR Folha de dados(PDF) 1 Page - International Rectifier |
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IRF5210STRR Folha de dados(HTML) 1 Page - International Rectifier |
1 / 11 page IRF5210S/L HEXFET® Power MOSFET PD - 91405C l Advanced Process Technology l Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated 5/13/98 S D G Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodatingdiesizesuptoHEX-4.Itprovidesthehighest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5210L) is available for low- profile applications. Description VDSS = -100V RDS(on) = 0.06Ω ID = -40A 2 D P ak TO-26 2 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 Thermal Resistance °C/W Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V
-40 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V
-29 A IDM Pulsed Drain Current
-140 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy
780 mJ IAR Avalanche Current -21 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt
-5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C |
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