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IRF5210STRR Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF5210STRR
Descrição Electrónicos  Advanced Process Technology
Download  11 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF5210STRR Folha de dados(HTML) 1 Page - International Rectifier

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IRF5210S/L
HEXFET® Power MOSFET
PD - 91405C
l Advanced Process Technology
l Surface Mount (IRF5210S)
l Low-profile through-hole (IRF5210L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
5/13/98
S
D
G
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodatingdiesizesuptoHEX-4.Itprovidesthehighest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF5210L) is available for low-
profile applications.
Description
VDSS = -100V
RDS(on) = 0.06Ω
ID = -40A
2
D
P ak
TO-26 2
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
Thermal Resistance
°C/W
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V…
-40
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V…
-29
A
IDM
Pulsed Drain Current
…
-140
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚…
780
mJ
IAR
Avalanche Current

-21
A
EAR
Repetitive Avalanche Energy

20
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ…
-5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C


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