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SI4932DY Folha de dados(PDF) 3 Page - Vishay Siliconix |
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SI4932DY Folha de dados(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 69012 S-83042-Rev. A, 22-Dec-08 www.vishay.com 3 Vishay Siliconix Si4932DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 VGS =10thru 4 V VGS =3 V VDS - Drain-to-Source Voltage (V) 0.011 0.012 0.013 0.014 0.015 0.016 0 6 12 18 24 30 VGS =10 V VGS =4.5 V ID - Drain Current (A) 0 2 4 6 8 10 0 7 14 21 28 35 ID =5A VDS =20 V VDS =10 V VDS =15 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0 1 234 5 TC = 25 °C TC = 125 °C TC =- 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 400 800 1200 1600 2000 0.0 2.4 4.8 7.2 9.6 12 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS =10 V VGS =4.5 V ID =7A TJ -Junction Temperature (°C) |
Nº de peça semelhante - SI4932DY |
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Descrição semelhante - SI4932DY |
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