SI1023CX datasheet(1/8 Pages) VISHAY

Nome de Peças	SI1023CX

Descrição Electrónicos	Dual P-Channel 20 V (D-S) MOSFET

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Vishay Siliconix

Si1023CX

Document Number: 63303

S11-1384-Rev. A, 11-Jul-11

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual P-Channel 20 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

Typical ESD protection: 1000 V (HBM)

•

Fast Switching Speed

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load and Small Signal Switch for Portable Devices

•

Drivers: Relays, Solenoids, Displays, Lamps

•

Battery Operated Systems

•

Smart Phones, Tablet PCs

Notes:

a. Maximum under steady state conditions is 675 °C/W.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

Qg (Typ.)

- 20

0.756 at VGS = - 4.5 V

- 0.35

1 nC

1.038 at VGS = - 2.5 V

- 0.35

1.44 at VGS = - 1.8 V

- 0.1

2.4 at VGS = - 1.5 V

- 0.05

Ordering Information: Si1023CX-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

7XX

Lot Traceability

and Date Code

Part # Code

SC-89 (6-LEADS)

Top View

Dual P-Channel MOSFET

D

1

S

1

G

1

D

2

S

2

G

2

3

1

D2

G2

S1

5

2

4

6

D1

S2

G1

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TA = 25 °C

ID

- 0.45b, c

A

TA = 70 °C

- 0.36b, c

Pulsed Drain Current (t = 300 µs)

IDM

- 1.5

Continuous Source-Drain Diode Current

TA = 25 °C

IS

- 0.18b, c

Maximum Power Dissipation

TA = 25 °C

PD

0.22b, c

W

TA = 70 °C

0.14b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

t

5 s

RthJA

470

565

°C/W

Steady State

State

560

675

Nº de peça semelhante - SI1023CX

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI1023CX	182Kb / 8P	Dual P-Channel 20 V (D-S) MOSFET 09-Jul-2021
Vishay Siliconix	SI1023CX	182Kb / 8P	Dual P-Channel 20 V (D-S) MOSFET 09-Jul-2021

More results

Descrição semelhante - SI1023CX

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI3911DV	47Kb / 4P	Dual P-Channel 20-V (D-S) MOSFET Rev. B, 18-Mar-02
	SI7913DN	67Kb / 5P	Dual P-Channel 20-V (D-S) MOSFET Rev. B, 13-Jun-05
	SI9933CDY-T1-GE3	276Kb / 10P	Dual P-Channel 20-V (D-S) MOSFET Rev. A, 04-Aug-08
	SIA911EDJ	122Kb / 7P	Dual P-Channel 20-V (D-S) MOSFET Rev. B, 09-Mar-09
	SI6981DQ	107Kb / 6P	Dual P-Channel 20-V (D-S) MOSFET Rev. B, 02-Jun-08
	SIA921EDJ	124Kb / 7P	Dual P-Channel 20-V (D-S) MOSFET Rev. B, 02-Nov-09
	SIA923EDJ	120Kb / 7P	Dual P-Channel 20 V (D-S) MOSFET Rev. A, 19-Jul-10
	SI3981DV	86Kb / 6P	Dual P-Channel 20-V (D-S) MOSFET Rev. C, 29-Mar-04
	SIB911DK	232Kb / 5P	Dual P-Channel 20-V (D-S) MOSFET Rev. A, 14-May-07
VBsemi Electronics Co.,...	VBKB4265	380Kb / 6P	Dual P-Channel 20-V (D-S) MOSFET
VBsemi Electronics Co.,...	VB4290	686Kb / 9P	Dual P-Channel 20 V (D-S) MOSFET

More results

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