ES2A, ES2B, ES2C, ES2D

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Vishay General Semiconductor

Revision: 30-Oct-13

2

Document Number: 88587

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

Note

Note



Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

ES2A

ES2B

ES2C

ES2D

UNIT

Maximum instantaneous forward

voltage

2.0 A

0.90

V

Maximum DC reverse current at

rated DC blocking voltage

10

μA

350

Max. reverse recovery time

20

ns

Maximum reverse recovery time

dI/dt = 50 A/μs,



30

ns

50

Maximum stored charge

dI/dt = 50 A/μs,



10

nC

25

Typical junction capacitance

4.0 V, 1 MHz

18

pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

ES2A

ES2B

ES2C

ES2D

UNIT

Typical thermal resistance

75

°C/W

20

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

ES2D-E3/52T

0.096

52T

750

7" diameter plastic tape and reel

ES2D-E3/5BT

0.096

5BT

3200

13" diameter plastic tape and reel

0.096

52T

750

7" diameter plastic tape and reel

0.096

5BT

3200

13" diameter plastic tape and reel

0

3.0

80

90

100

110

120

130

140

150

Lead Temperature (°C)

2.0

1.0

Resistive or Inductive Load

P.C.B. Mounted on

0.2" x 0.2" (5.0 mm x 5.0 mm)

Copper Pad Areas

0

10

20

30

40

50

60

1

100

10

8.3 ms Single Half Sine-Wave

at T

Number of Cycles at 60 Hz