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FDD18N20LZ Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FDD18N20LZ Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page December 2013 ©201 1 Fairchild Semiconductor Corporation FDD18N20LZ Rev. C1 www.fairchildsemi.com 1 FDD18N20LZ N-Channel UniFETTM MOSFET 200 V, 16 A, 125 mΩ Features • R DS(on) = 125 mΩ (Typ.) @ VGS = 10 V, ID = 8 A • Low Gate Charge (Typ. 30 nC) • Low CRSS (Typ. 25 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability •RoHS Compliant Applications • LED TV • Consumer Appliances • Uninterruptible Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. MOSFET Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FDD18N20LZ Unit RθJC Thermal Resistance, Junction to Case, Max. 1.4 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 83 D-PAK G S D G D S Symbol Parameter FDD18N20LZ Unit VDSS Drain to Source Voltage 200 V VGSS Gate to Source Voltage ±20 V ID Drain Current - Continuous (TC = 25oC) 16 A - Continuous (TC = 100oC) 9.6 IDM Drain Current - Pulsed (Note 1) 64 A EAS Single Pulsed Avalanche Energy (Note 2) 320 mJ IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns PD Power Dissipation (TC = 25oC) 89 W - Derate above 25oC0.7 oC W/ TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds. 300 oC |
Nº de peça semelhante - FDD18N20LZ |
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Descrição semelhante - FDD18N20LZ |
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