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IRF6635PBF Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRF6635PBF
Descrição Electrónicos  Compatible with existing Surface Mount Techniques
Download  10 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF6635PBF Folha de dados(HTML) 2 Page - International Rectifier

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IRF6635PbF
2
www.irf.com
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
24
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.3
1.8
m
–––
1.8
2.4
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-6.1
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
45
–––
–––
S
Qg
Total Gate Charge
–––
47
71
Qgs1
Pre-Vth Gate-to-Source Charge
–––
12
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
4.7
–––
nC
Qgd
Gate-to-Drain Charge
–––
17
Qgodr
Gate Charge Overdrive
–––
13
–––
See Fig. 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
22
–––
Qoss
Output Charge
–––
29
–––
nC
RG
Gate Resistance
–––
1.0
–––
td(on)
Turn-On Delay Time
–––
21
–––
tr
Rise Time
–––
13
–––
td(off)
Turn-Off Delay Time
–––
33
–––
ns
tf
Fall Time
–––
8.3
–––
Ciss
Input Capacitance
–––
5970
–––
Coss
Output Capacitance
–––
1280
–––
pF
Crss
Reverse Transfer Capacitance
–––
600
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
110
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
250
(Body Diode)
g
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
20
30
ns
Qrr
Reverse Recovery Charge
–––
48
72
nC
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 4.5V
ID = 25A
VGS = 0V
VDS = 15V
ID = 25A
TJ = 25°C, IF = 25A
di/dt = 500A/µs
i
See Fig. 18
TJ = 25°C, IS = 25A, VGS = 0V
i
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 32A
i
VGS = 4.5V, ID = 25A
i
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
MOSFET symbol
Clamped Inductive Load
VDS = 15V, ID = 25A
Conditions
See Fig. 16 & 17
ƒ = 1.0MHz
VDS = 16V, VGS = 0V
VDD = 16V, VGS = 4.5V
i
VDS = 15V


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