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FQPF6N90CT Folha de dados(PDF) 2 Page - Fairchild Semiconductor

Nome de Peças FQPF6N90CT
Descrição Electrónicos  N-Channel QFET짰 MOSFET 900 V, 6.0 A, 2.3
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF6N90CT Folha de dados(HTML) 2 Page - Fairchild Semiconductor

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Package Marking and Ordering Information
©2006 Fairchild Semiconductor Corporation
FQP6N90C / FQPF6N90C Rev. C1
www.fairchildsemi.com
2
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 34 mH, IAS = 6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 6 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FQP6N90C
FQP6N90C
TO-220
N/A
N/A
50 units
Packing Method
Tube
TO-220F
Tube
N/A
N/A
50 units
FQPF6N90C
FQPF6N90C
Electrical Characteristics T
C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
900
--
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
1.07
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
--
--
10
µA
VDS = 720 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3 A
--
1.93
2.3
gFS
Forward Transconductance
VDS = 50 V, ID = 3 A
--
5.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1360
1770
pF
Coss
Output Capacitance
--
110
145
pF
Crss
Reverse Transfer Capacitance
--
11
15
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 450 V, ID = 6 A,
RG = 25 Ω
(Note 4)
--
35
80
ns
tr
Turn-On Rise Time
--
90
190
ns
td(off)
Turn-Off Delay Time
--
55
120
ns
tf
Turn-Off Fall Time
--
60
130
ns
Qg
Total Gate Charge
VDS = 720 V, ID = 6 A,
VGS = 10 V
(Note 4)
--
30
40
nC
Qgs
Gate-Source Charge
--
9.0
--
nC
Qgd
Gate-Drain Charge
--
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
6.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
24
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 6 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 6 A,
dIF / dt = 100 A/µs
--
630
--
ns
Qrr
Reverse Recovery Charge
--
6.9
--
µC


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