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FQPF6N90CT Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
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FQPF6N90CT Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page Package Marking and Ordering Information ©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1 www.fairchildsemi.com 2 Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 34 mH, IAS = 6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 6 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. Part Number Top Mark Package Reel Size Tape Width Quantity FQP6N90C FQP6N90C TO-220 N/A N/A 50 units Packing Method Tube TO-220F Tube N/A N/A 50 units FQPF6N90C FQPF6N90C Electrical Characteristics T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 1.07 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA VDS = 720 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3 A -- 1.93 2.3 Ω gFS Forward Transconductance VDS = 50 V, ID = 3 A -- 5.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1360 1770 pF Coss Output Capacitance -- 110 145 pF Crss Reverse Transfer Capacitance -- 11 15 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 450 V, ID = 6 A, RG = 25 Ω (Note 4) -- 35 80 ns tr Turn-On Rise Time -- 90 190 ns td(off) Turn-Off Delay Time -- 55 120 ns tf Turn-Off Fall Time -- 60 130 ns Qg Total Gate Charge VDS = 720 V, ID = 6 A, VGS = 10 V (Note 4) -- 30 40 nC Qgs Gate-Source Charge -- 9.0 -- nC Qgd Gate-Drain Charge -- 12 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 6.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 6 A, dIF / dt = 100 A/µs -- 630 -- ns Qrr Reverse Recovery Charge -- 6.9 -- µC |
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