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STD5407N Folha de dados(PDF) 2 Page - ON Semiconductor

Nome de Peças STD5407N
Descrição Electrónicos  40 V, 38 A, Single N-Channel, DPAK
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

STD5407N Folha de dados(HTML) 2 Page - ON Semiconductor

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NTD5407N, STD5407N
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
39
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
1.0
mA
TJ = 100°C
10
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±30 V
±100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.5
3.5
V
Gate Threshold Temperature
Coefficient
VGS(TH)/TJ
−6.0
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 20 A
21
26
mW
VGS = 5.0 V, ID = 10 A
32
40
Forward Transconductance
gFS
VGS = 10 V, ID = 18 A
15
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = 32 V
615
1000
pF
Output Capacitance
COSS
173
Reverse Transfer Capacitance
CRSS
80
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 32 V,
ID = 38 A
20
nC
Gate−to−Source Charge
QGS
2.25
Gate−to−Drain Charge
QGD
10.5
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
td(ON)
VGS = 10 V, VDD = 32 V,
ID = 38 A, RG = 2.5 W
6.8
ns
Rise Time
tr
17
Turn−Off Delay Time
td(OFF)
66
Fall Time
tf
51
SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3)
Turn−On Delay Time
td(ON)
VGS = 5 V, VDD = 20 V,
ID = 20 A, RG = 2.5 W
10
ns
Rise Time
tr
175
Turn−Off Delay Time
td(OFF)
13
Fall Time
tf
23
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 5.0 A
TJ = 25°C
0.9
1.1
V
TJ = 125°C
0.75
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 15 A
38
ns
Charge Time
ta
20.5
Discharge Time
tb
17
Reverse Recovery Charge
QRR
40
nC
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.


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