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IRF9520NL Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRF9520NL
Descrição Electrónicos  Advanced Process Technology
Download  11 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF9520NL Folha de dados(HTML) 2 Page - International Rectifier

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IRF9520NS/L
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-100
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
-0.10 –––
V/°C
Reference to 25°C, ID = -1mA
…
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.48
VGS = 10V, ID = -4.0A
„
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
1.4
–––
–––
S
VDS = -50V, ID = -4.0A
…
–––
–––
-25
µA
VDS = -100V, VGS = 0V
–––
–––
-250
VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
27
ID = -4.0A
Qgs
Gate-to-Source Charge
–––
–––
5.0
nC
VDS = -80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
15
VGS = -10V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
14
–––
VDD = -50V
tr
Rise Time
–––
47
–––
ID = -4.0A
td(off)
Turn-Off Delay Time
–––
28
–––
RG = 22Ω
tf
Fall Time
–––
31
–––
RD = 12Ω, See Fig. 10
„…
Between lead,
–––
–––
and center of die contact
Ciss
Input Capacitance
–––
350
–––
VGS = 0V
Coss
Output Capacitance
–––
110
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
70
–––
ƒ = 1.0MHz, See Fig. 5
…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS
Drain-to-Source Leakage Current
nH
7.5
LS
Internal Source Inductance
‚ Starting T
J = 25°C, L = 18mH
RG = 25Ω, IAS = -4.0A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ ISD ≤ -4.0A, di/dt ≤ -300A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%
… Uses IRF9520N data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.6
V
TJ = 25°C, IS = -4.0A, VGS = 0V
„
trr
Reverse Recovery Time
–––
100
150
ns
TJ = 25°C, IF = -4.0A
Qrr
Reverse Recovery
Charge
___
420
630
nC
di/dt = -100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
S
D
G
-6.8
-27


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