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IRF6729MTRPBF Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRF6729MTRPBF
Descrição Electrónicos  RoHs Compliant and Halogen-Free
Download  9 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF6729MTRPBF Folha de dados(HTML) 2 Page - International Rectifier

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IRF6729MTRPbF
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‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
4.0
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.4
1.8
m
–––
2.2
2.7
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-4.2
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
100
µA
–––
–––
5.0
mA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
120
–––
–––
S
Qg
Total Gate Charge
–––
42
63
Qgs1
Pre-Vth Gate-to-Source Charge
–––
11
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
4.9
–––
nC
Qgd
Gate-to-Drain Charge
–––
14
–––
Qgodr
Gate Charge Overdrive
–––
12.1
–––
See Fig. 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
18.9
–––
Qoss
Output Charge
–––
29
–––
nC
RG
Gate Resistance
–––
1.3
2.2
td(on)
Turn-On Delay Time
–––
22
–––
tr
Rise Time
–––37–––
ns
td(off)
Turn-Off Delay Time
–––
20
–––
tf
Fall Time
–––
15
–––
Ciss
Input Capacitance
–––
6030
–––
Coss
Output Capacitance
–––
1360
–––
pF
Crss
Reverse Transfer Capacitance
–––
560
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
31
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
250
(Body Diode)Ãg
VSD
Diode Forward Voltage
–––
–––
0.80
V
trr
Reverse Recovery Time
–––
30
45
ns
Qrr
Reverse Recovery Charge
–––
40
60
nC
MOSFET symbol
RG = 1.8Ω
VDS = 15V, ID = 25A
Conditions
See Fig. 17
ƒ = 1.0MHz
VDS = 16V, VGS = 0V
VGS = 20V
VGS = -20V
VDS = 24V, VGS = 0V
VDS = 15V
VDS = 24V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 10mA
VGS = 10V, ID = 31A i
VGS = 4.5V, ID = 25A i
VDS = VGS, ID = 10mA
VDS = VGS, ID = 150µA
TJ = 25°C, IF = 25A
VGS = 4.5V
ID = 25A
VGS = 0V
VDS = 15V
ID = 25A
VDD = 15V, VGS = 4.5VÃi
di/dt = 300A/µs i
TJ = 25°C, IS = 25A, VGS = 0V i
showing the
integral reverse
p-n junction diode.


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