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IRF8308MTR1PBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRF8308MTR1PBF Folha de dados(HTML) 1 Page - International Rectifier |
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1 / 10 page  Fig 1. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.051mH, RG = 25Ω, IAS = 21A. Notes: DirectFET Power MOSFET Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Typical values (unless otherwise specified) l RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested SQ SX ST MQ MX MT MP DirectFET ISOMETRIC MX Description The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on- state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt- induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 21 12 Max. 21 150 212 ±20 30 27 2.0 4.0 6.0 8.0 10.0 VGS, Gate-to-Source Voltage (V) 0 2 4 6 8 TJ = 25°C TJ = 125°C ID = 27A 0 20406080 QG Total Gate Charge (nC) 0 2 4 6 8 10 12 VDS= 24V VDS= 15V ID= 21A Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 28nC 8.2nC 3.5nC 34nC 20nC 1.8V IRF8308MPbF 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 Form Quantity IRF8308MTRPbF DirectFET Medium Can Tape and Reel 4800 "TR" suffix IRF8308MTR1PbF DirectFET Medium Can Tape and Reel 1000 "TR1" suffix EOL notice # 264 Note Orderable part number Package Type Standard Pack |
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