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STB76NF80 Folha de dados(PDF) 5 Page - STMicroelectronics |
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STB76NF80 Folha de dados(HTML) 5 Page - STMicroelectronics |
5 / 13 page STB76NF80 Electrical characteristics Doc ID 17290 Rev 1 5/13 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD= 37.5 V, ID= 45 A, RG=4.7 Ω, VGS=10 V Figure 14 on page 8 - 25 100 66 30 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 320 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 80 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C Figure 16 on page 8 - 132 660 10 ns nC A |
Nº de peça semelhante - STB76NF80 |
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Descrição semelhante - STB76NF80 |
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