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STP18NM60N Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STP18NM60N
Descrição Electrónicos  N-channel 600 V, 0.27 廓, 13 A MDmesh??II Power MOSFET in TO-220, TO-220FP, TO-247, D짼PAK and I짼PAK
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
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STB/F/I/P/W18NM60N
Electrical ratings
Doc ID 15868 Rev 3
3/18
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK,I²PAK
TO-220,TO-247
TO-220FP
VDS
Drain-source voltage (VGS =0)
600
V
VGS
Gate- source voltage
± 25
ID
Drain current (continuous) at TC = 25 °C
13
13 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
8.2
8.2 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
52
52 (1)
A
PTOT
Total dissipation at TC = 25 °C
110
30
W
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
4.5
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
350
mJ
dv/dt(3)
3.
ISD ≤ 13 A, di/dt ≤400 A/µs, peak VDS ≤V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
D²PAK I²PAK TO-220 TO-247 TO-220FP
Unit
Rthj-case
Thermal resistance junction-case
max
1.14
4.17
°C/W
Rthj-amb
Thermal resistance junction-amb
max
62.5
50
62.5
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
°C


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