STY112N65M5 datasheet(4/12 Pages) STMICROELECTRONICS

Nome de Peças	STY112N65M5

Descrição Electrónicos	N-channel 650 V, 0.019 廓, 96 A, MDmesh??V Power MOSFET in Max247 package

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STY112N65M5

4/

Doc ID 15321 Rev 3

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

VDS = 650 V, TC=125 °C

10

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 48 A

0.019

0.022

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

16870

365

7

-

pF

Co(tr)

(1)

1.

Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0

to 80% VDSS.

Equivalent

capacitance time

-

1333

-

pF

Co(er)

(2)

2.

Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0

to 80% VDSS.

Equivalent

capacitance energy

-

350

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

1.26

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 48 A,

VGS = 10 V

(see Figure 15)

-

350

97

118

-

nC

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