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2SK3338-01 Folha de dados(PDF) 1 Page - Fuji Electric

Nome de Peças 2SK3338-01
Descrição Electrónicos  N-CHANNEL SILICON POWER MOS-FET
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Fabricante Electrônico  FUJI [Fuji Electric]
Página de início  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK3338-01 Folha de dados(HTML) 1 Page - Fuji Electric

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1
Item
Symbol
Rating
Unit
Drain-source voltage
VDS
500
Continuous drain current
ID
±20
Pulsed drain current
ID(puls]
±80
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR *2
20
Maximum Avalanche Energy
EAV*1
775
Max. power dissipation
PD
340
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3338-01
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=500V
VGS=±30V
ID=10A
VGS=10V
ID=10A
VDS=25V
VCC=300V ID=20A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
V
µA
mA
nA
S
pF
nC
A
V
ns
µC
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.368
50.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
Tch=25°C
VGS=0V
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
Vcc=250V
ID=20A
VGS=10V
L=3.56 mH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
A
mJ
W
°C
*1 L=3.56mH, Vcc=50V
*2 Tch=150°C
500
2.5
3.0
3.5
10
500
0.2
1.0
10
100
0.21
0.27
918
3350
5025
480
720
200
300
27
40
100
150
250
375
100
150
155
235
38
60
50
75
20
1.1
1.65
600
11.0
-55 to +150
<
Gate(G)
Source(S)
Drain(D)


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