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STD9NM40N Folha de dados(PDF) 1 Page - STMicroelectronics |
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STD9NM40N Folha de dados(HTML) 1 Page - STMicroelectronics |
1 / 18 page This is information on a product in full production. December 2012 Doc ID 023762 Rev 2 1/18 18 STD9NM40N, STP9NM40N N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages Datasheet — production data Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Order codes VDSS@TJMAX RDS(on)max. ID STD9NM40N 450 V < 0.79 Ω 5.6 A STP9NM40N DPAK 1 3 TAB TO-220 1 2 3 TAB Table 1. Device summary Order codes Marking Packages Packaging STD9NM40N 9NM40N DPAK Tape and reel STP9NM40N TO-220 Tube www.st.com |
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Descrição semelhante - STD9NM40N |
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