©

1996

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2159

N-CHANNEL MOS FET

FOR HIGH-SPEED SWITCHING

Document No. D11235EJ2V0DS00 (2nd edition)

Date Published June 1996 P

Printed in Japan

The 2SK2159 is an N-channel vertical type MOS FET featur-

ing an operating voltage as low as 1.5 V. Because it can be

driven on a low voltage and it is not necessary to consider

driving current, the 2SK2159 is suitable for driving actuators of

low-voltage portable systems such as headphone stereo sets

and camcorders.

FEATURES

•

Capable of drive gate with 1.5 V

•

PARAMETER

SYMBOL

TEST CONDITIONS

RATINGS

UNIT

Drain to Source Voltage

60

V

Gate to Source Voltage

±14

V

Drain Current (DC)

±2.0

A

Drain Current (pulse)

PW

≤ 10 ms,

±4.0

A

Duty Cycle

≤ 50 %

Total Power Dissipation

× 0.7 mm ceramic substrate.

2.0

W

Channel Temperature

150

˚C

Storage Temperature

–55 to +150

˚C

4.5

± 0.1

1.6

± 0.2

1

2

3

3.0

1.5

0.42

±0.06

0.47

±0.06

0.42

±0.06

1.5

± 0.1

+0.03

2

3

Gate protection

diode

Internal diode

1

PACKAGE DIMENSIONS

(in millimeters)

EQUIVALENT CIRCUIT

PIN CONNECTION

1. Source (S)

2. Drain (D)

3. Gate (G)

Marking: NW