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BU2506DX Folha de dados(PDF) 2 Page - Savantic, Inc. |
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BU2506DX Folha de dados(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU2506DX CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 V VCEsat Collector-emitter saturation voltage IC=3.0A ;IB=0.79 A 5.0 V VBEsat Base-emitter saturation voltage IC=3.0A ;IB=0.79 A 1.1 V ICES Collector cut-off current VCE=BVCES; VBE=0 TC=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 136 mA hFE-1 DC current gain IC=0.3 A ; VCE=5V 12 hFE-2 DC current gain IC=3.0A ; VCE=5V 3.8 5.5 7.5 VF Diode forward voltage IF=3.0A 1.6 2.0 V CC Collector capacitance VCB=10V;IE=0;f=1.0MHz 47 pF |
Nº de peça semelhante - BU2506DX |
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Descrição semelhante - BU2506DX |
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