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LM4992SDBD Folha de dados(PDF) 3 Page - Texas Instruments

Nome de Peças LM4992SDBD
Descrição Electrónicos  420mW Stereo Cell Phone Audio Amplifier
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THS770012
www.ti.com
SLOS669C
– FEBRUARY 2010 – REVISED JANUARY 2012
THERMAL INFORMATION
THS770012
THERMAL METRIC(1)
UNITS
RGE (24) PINS
θJA
Junction-to-ambient thermal resistance
44.1
θJC(top)
Junction-to-case(top) thermal resistance
35
θJB
Junction-to-board thermal resistance
19
°C/W
ψJT
Junction-to-top characterization parameter
0.5
ψJB
Junction-to-board characterization parameter
18.8
θJC(bottom)
Junction-to-case(bottom) thermal resistance
8.9
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
ELECTRICAL CHARACTERISTICS
Test conditions are at TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +12dB, differential input
and output, and input and output referenced to midsupply, unless otherwise noted. Measured using evaluation module as
discussed in Test Circuits section.
TEST
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
LEVEL(1)
AC PERFORMANCE
Gain = +10dB, VOUT = 200mVPP
900
MHz
C
Gain = +11dB, VOUT = 200mVPP
810
MHz
C
Small-signal bandwidth
Gain = +12dB, VOUT = 200mVPP
680
MHz
C
Gain = +13.7dB, VOUT = 200mVPP
540
MHz
C
Gain = +10dB, VOUT = 2VPP
845
MHz
C
Gain = +11dB, VOUT = 2VPP
790
MHz
C
Large-signal bandwidth
Gain = +12dB, VOUT = 2VPP
680
MHz
C
Gain = +13.7dB, VOUT = 2VPP
548
MHz
C
Bandwidth for 0.1dB flatness
Gain = +12dB, VOUT = 2VPP
130
MHz
C
VOUT = 2V step
3300
V/
µs
C
Slew rate
VOUT = 4V step
3400
V/
µs
C
Rise time
VOUT = 2V step
0.6
ns
C
Fall time
VOUT = 2V step
0.6
ns
C
Settling time to 0.1%
VOUT = 2V step
2.2
ns
C
Input return loss, s11
See s-Parameters section, f
< 200MHz
–18
dB
C
Output return loss, s22
See s-Parameterssection, f
< 200MHz
–16
dB
C
Reverse isolation, s12
See s-Parameters section, f
< 200MHz
–60
dB
C
f = 10MHz
–90
dBc
C
Second-order harmonic
f = 50MHz
–70
dBc
C
distortion, Gain = +12dB, RL =
f = 100MHz
–73
dBc
C
400
Ω, VOUT = 2VPP
f = 200MHz
–74
dBc
C
f = 10MHz
–100
dBc
C
Third-order harmonic distortion,
f = 50MHz
–85
dBc
C
Gain = +12dB, RL = 400Ω, VOUT
f = 100MHz
–84
dBc
C
= 2VPP
f = 200MHz
–73
dBc
C
f = 50MHz, 10MHz spacing
–62
dBc
C
Second-order intermodulation
f = 100MHz, 10MHz spacing
–76
dBc
C
distortion, Gain = +12dB, RL =
f = 150MHz, 10MHz spacing
–78
dBc
C
400
Ω, VOUT = 2VPP
f = 200MHz, 10MHz spacing
–78
dBc
C
(1)
Test levels: (A) 100% tested at +25
°C. Over-temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value only for information.
Copyright
© 2010–2012, Texas Instruments Incorporated
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