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LM3668 Folha de dados(PDF) 3 Page - Texas Instruments

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Nome de Peças LM3668
Descrição Electrónicos  1A, High Efficiency Dual Mode Single Inductor Buck-Boost DC/DC Converter
Download  26 Pages
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

LM3668 Folha de dados(HTML) 3 Page - Texas Instruments

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background image
1
2
3
4
9
10
11
12
8
DAP
5
7
6
VOUT
SW2
PGND
SW1
PVIN
EN
FB
VSEL
MODE/
SYNC
SGND
NC*
VDD
DAP
11
12
10
9
8
7
6
5
4
3
2
1
FB
VSEL
MODE/
SYNC
SGND
NC*
VDD
VOUT
SW2
PGND
SW1
PVIN
EN
LM3668
www.ti.com
SNVS449L – JUNE 2007 – REVISED MARCH 2011
Connection Diagrams
Figure 4. Top View
Figure 5. Bottom View
See Package Number DQB (WSON)
Pin Descriptions
Pin #
Pin Name
Description
1
VOUT
Connect to output capacitor.
2
SW2
Switching Node connection to the internal PFET switch (P2) and NFET synchronous rectifier (N2).
3
PGND
Power Ground.
4
SW1
Switching Node connection to the internal PFET switch (P1) and NFET synchronous rectifier (N1).
5
PVIN
Supply to the power switch, connect to the input capacitor.
6
EN
Enable Input. Set this digital input high for normal operation. For shutdown, set low.
7
VDD
Signal Supply input. If board layout is not optimum an optional 1µF ceramic capacitor is suggested as
close to this pin as possible.
8
NC
No connect. Connect this pin to SGND on PCB layout.
9
SGND
Analog and Control Ground.
10
MODE/SYNC
Mode = LOW, Automatic Mode. Mode= HI, Forced PWM Mode SYNC = external clock synchronization
from 1.6MHz to 2.7MHz (When SYNC function is used, device is forced in PWM mode).
11
VSEL
Voltage selection pin; ( ie: 2.8V/3.3V option) Logic input low (or GND) = 2.8V and logic high = 3.3V (or
VIN) to set output Voltage.
12
FB
Feedback Analog Input. Connect to the output at the output filter.
DAP
DAP
Die Attach Pad, connect the DAP to SGND on PCB layout to enhance thermal performance. It should
not be used as a primary ground connection.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Copyright © 2007–2011, Texas Instruments Incorporated
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