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TPD4E002 Folha de dados(PDF) 3 Page - Texas Instruments |
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TPD4E002 Folha de dados(HTML) 3 Page - Texas Instruments |
3 / 12 page 8.0 –40 0 25 70 85 125 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Temperature (ºC) 9.0 1 2 3 4 5 6 7 8 9 10 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (Mhz) TPD4E002 www.ti.com SLVS615D – JULY 2006 – REVISED JUNE 2010 Electrical Characteristics Tamb = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VBR I/O Breakdown voltage IR = 1 mA 6.1 7.2 V IRM I/O Leakage current VRM = 3 V 0.1 mA aT Voltage temperature coefficient 45 10–4/°C C I/O Capacitance per line 11 pF Rd Dynamic resistance(1) 2 Ω (1) Rd is measured under reverse breakdown condition with inrush current in the range 1Amps using pulse technique TYPICAL CHARACTERISTICS Figure 1. I/O Capacitance vs Temperature Figure 2. I/O Capacitance vs Frequency (Typical Values) Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPD4E002 |
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