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LM3242 Folha de dados(PDF) 5 Page - Texas Instruments

Nome de Peças LM3242
Descrição Electrónicos  6MHz, 750mA Miniature, Adjustable, Step-Down DC-DC Converter with Auto Bypass for RF Power Amplifiers
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

LM3242 Folha de dados(HTML) 5 Page - Texas Instruments

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LM3242
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SNOSB48D – OCTOBER 2011 – REVISED MARCH 2013
System Characteristics
The following spec table entries are ensured by design providing the component values in the Typical Application Circuit are
used. These parameters are not ensured by production testing. Min and Max values apply over the full operating ambient
temperature range (
−30°C ≤ TA ≤ 90°C) and over the VIN range = 2.7V to 5.5V unless otherwise specified. L = 0.5 µH, DCR
= 50 m
Ω, CIN = 10 µF, 6.3V, 0603(1608), COUT = 4.7 µF, 6.3V, 0402.
Symbol
Parameter
Condition
Min
Typ
Max
Units
VIN = 3.7V, VOUT = 1.4V to 3.4V
VOUT rise time
0.1 µs < VCON_TR < 1 µs,
9
VCON change to 90%
RL = 12Ω
TVCON_TR
µs
VIN = 3.7V, VOUT = 3.4V to 1.4V
VOUT fall time
0.1 µs < VCON_TF < 1 µs,
9
VCON change to 10%
RL = 12Ω
D
Maximum Duty cycle
100
%
Bypass Mode Resistance
VIN = VGS = 3.1V, IOUT = −500 mA
RBP
75
m
(1)
VCON > 1.16V
2.7V
≤ VIN ≤ 5.5V
750
2.5 × VCON
≤ VIN − 285 mV
Maximum output current
IOUT
mA
capability
2.7V
≤ VIN ≤ 5.5V
1000
2.5 × VCON
≥ VIN – 165 mV, Bypass mode
CVCON
VCON input capacitance
VCON = 1V, Test frequency = 100 KHz
<1.0
pF
VOUT
−3
+3
%
VCON range 0.16V to
0mA
≤ IOUT ≤ 750 mA
(2)
Linearity
1.44V
−50
+50
mV
Turn-on time (time for
EN = Low-to-High
output to reach 95% final
TON
VIN = 4.2V, VOUT = 3.4V
50
µs
value after Enable low-to-
IOUT = < 1mA, COUT = 4.7 µF
high transition)
Auto Bypass Detect
TBP, NEG
Negative Threshold Delay
(3)
10
Time
µs
TBP, POS
Auto Bypass Detect
Positive Threshold Delay
(4)
0.1
Time
VIN = 3.6V, VOUT = 0.8V
75
IOUT = 10 mA, ECO mode
VIN = 3.6V, VOUT = 1.8V
η
Efficiency
90
%
IOUT = 200 mA, PWM mode
VIN = 3.9V, VOUT = 3.3V
95
IOUT = 500 mA, PWM mode
VIN = 3.6V to 4.2V, TR = TF = 10 µs,
LINE TR
Line transient response
50
mVpk
IOUT = 100 mA, VOUT = 0.8V
VIN = 3.1V/3.6V/4.5V, VOUT = 0.8V,
LOAD TR
Load transient response
IOUT = 50 mA to 150 mA
50
mVpk
TR = TF = 0.1 µs
(1)
Total resistance in Bypass mode. Total includes the Bypass FET resistance in parallel with the PWM switch path resistance (PFET
resistance and series inductor parasistic resistance.)
(2)
Linearity limits are ±3% or ±50 mV, whichever is larger. VOUT is monotonic in nature with respect to VCON input.
(3)
Entering Bypass Mode VIN is compared to the programmed output voltage (2.5 × VCON). When VIN − (2.5 × VCON) falls below VBP,NEG
longer than TBP,NEG, the Bypass FET turns on, and the switching FET turns on.
(4)
Bypass Mode is exited when VIN − (2.5 × VCON) exceeds VBP,POS longer than TBP,POS, and PWM mode resumes. The hysteresis for
the bypass detection threshold VBP,POS-VBP,NEG will always be positive and will be approximately 50 mV.
Copyright © 2011–2013, Texas Instruments Incorporated
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