SS8050CTA datasheet(1/4 Pages) FAIRCHILD

Nome de Peças	SS8050CTA

Descrição Electrónicos	NPN Epitaxial Silicon Transistor

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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SS8050 Rev. B3

1

July 2010

SS8050

NPN Epitaxial Silicon Transistor

Features

• 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

• Complimentary to SS8550

• Collector Current: IC=1.5A

• Collector Power Dissipation: PC=2W (TC=25°C)

Absolute Maximum Ratings Ta = 25°C unless otherwise noted

Electrical Characteristics Ta = 25°C unless otherwise noted

hFE Classification

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current

1.5

A

PC

Collector Power Dissipation

1

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-65 ~ 150

°C

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC=100µA, IE=0

40

V

BVCEO

Collector-Emitter Breakdown Voltage

IC=2mA, IB=0

25

V

BVEBO

Emitter-Base Breakdown Voltage

IE=100µA, IC=0

6

V

ICBO

Collector Cut-off Current

VCB=35V, IE=0

100

nA

IEBO

Emitter Cut-off Current

VEB=6V, IC=0

100

nA

hFE1

hFE2

hFE3

DC Current Gain

VCE=1V, IC=5mA

VCE=1V, IC=100mA

VCE=1V, IC=800mA

45

85

40

300

VCE (sat)

Collector-Emitter Saturation Voltage

IC=800mA, IB=80mA

0.5

V

VBE (sat)

Base-Emitter Saturation Voltage

IC=800mA, IB=80mA

1.2

V

VBE (on)

Base-Emitter On Voltage

VCE=1V, IC=10mA

1

V

Cob

Output Capacitance

VCB=10V, IE=0, f=1MHz

9.0

pF

fT

Current Gain Bandwidth Product

VCE=10V, IC=50mA

100

MHz

Classification

B

C

D

hFE2

85 ~ 160

120 ~ 200

160 ~ 300

1. Emitter 2. Base 3. Collector

TO-92

1

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