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1N4151 Folha de dados(PDF) 2 Page - General Semiconductor |
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1N4151 Folha de dados(HTML) 2 Page - General Semiconductor |
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2 / 4 page  1N4151 ELECTRICAL CHARACTERISTICS Ratings at 25 ¡C ambient temperature unless otherwise specified SYMBOL MIN. TYP. MAX. UNIT Forward Voltage at IF = 50 mA VF Ð Ð 1.0 Volts Leakage Current at VR = 50 V IR Ð Ð 50 nA at VR = 50 V, Tj = 150 ¡C IR ÐÐ 50 mA Reverse Breakdown Voltage Tested with 5 mA pulses V(BR)R 75 Ð Ð Volts Capacitance at VF = VR = 0 V Ctot ÐÐ 2 pF Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA trr ÐÐ 4 ns from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 W trr ÐÐ 2 ns Thermal Resistance Junction to Ambient Air RQJA Ð Ð 350(1) ¡C/W Rectification Efficiency at f = 100 MHZ, VRF = 2 V hv 0.45 Ð Ð Ð NOTES: (1) Valid provided that electrodes are kept at ambient temperature. Rectification Efficiency Measurement Circuit |
Nº de peça semelhante - 1N4151 |
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Descrição semelhante - 1N4151 |
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