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2N7002 Folha de dados(PDF) 2 Page - General Semiconductor |
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2N7002 Folha de dados(HTML) 2 Page - General Semiconductor |
2 / 5 page ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified 2N7002 Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at ID = 100 µA, VGS = 0 V(BR)DSS 60 90 – V Gate Threshold Voltage at VGS = VDS, ID = 1 mA VGS(th) –22.5 V Gate-Body Leakage Current at VGS = 15 V, VDS = 0 IGSS ––10 nA Drain Cutoff Current at VDS = 25 V, VGS = 0 IDSS ––0.5 µA Drain-Source ON Resistance at VGS = 10 V, ID = 500 mA rDS(ON) –57.5 Ω Thermal Resistance Junction to Substrate Backside RthSB – – 3201) K/W Thermal Resistance Junction to Ambient Air RthJA – – 4501) K/W Forward Transconductance at VDS = 10 V, ID = 200 mA, f = 1 MHz gm – 200 – mS Input Capacitance at VDS = 10 V, VGS = 0, f = 1 MHz Ciss –60 – pF Switching Times at VGS = 10 V, VDS = 10 V, RD = 100 Ω Turn-On Time Turn-Off Time ton toff – – 5 25 – – ns ns 1) Device on fiberglass substrate, see layout Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12) |
Nº de peça semelhante - 2N7002 |
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Descrição semelhante - 2N7002 |
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