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EGF1A Folha de dados(PDF) 1 Page - General Semiconductor

Nome de Peças EGF1A
Descrição Electrónicos  ULTRAFAST SURFACE MOUNT RECTIFIER
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Fabricante Electrônico  GE [General Semiconductor]
Página de início  http://www.vishay.com
Logo GE - General Semiconductor

EGF1A Folha de dados(HTML) 1 Page - General Semiconductor

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EGF1A THRU EGF1D
ULTRAFAST SURFACE MOUNT RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ Ideal for surface mount automotive applications
♦ High temperature metallurgically bonded construction
♦ Superfast recovery times for high efficiency
♦ Glass passivated cavity-free junction
♦ Built-in strain relief
♦ Easy pick and place
♦ High temperature soldering guaranteed: 450°C/5 seconds
at terminals
♦ Complete device submersible temperature of
265°C for 10 seconds in solder bath
MECHANICAL DATA
Case: JEDEC DO-214BA molded plastic over glass body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0048 ounces, 0.120 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
EGF1A
EGF1B
EGF1C
EGF1D
UNITS
Device Marking Code
EA
EB
EC
ED
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
Volts
Maximum RMS voltage
VRMS
35
70
105
140
Volts
Maximum DC blocking voltage
VDC
50
100
150
200
Volts
Maximum average forward rectified current
at TL=125°C
I(AV)
1.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
30.0
Amps
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
VF
1.0
Volts
Maximum DC reverse current
TA=25°C
5.0
at rated DC blocking voltage
TA=125°C
IR
50.0
µA
Typical reverse recovery time (NOTE 1)
trr
50.0
ns
Typical junction capacitance (NOTE 2)
CJ
15.0
pF
Typical thermal resistance (NOTE 3)
R
ΘJA
85.0
R
ΘJL
30.0
°C/W
Operating junction and storage temperature range
TJ,TSTG
-65 to +175
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied VR=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas
4/98
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.0105 (0.27)
0.030 (0.76)
0.060 (1.52)
0.006
0.152
TYP.
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.106 (2.69)
0.118 (3.00)
0.040 (1.02)
0.060 (1.52)
0.098 (2.49)
0.108 (2.74)
DO-214BA
®
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead
forming by Patent No. 5,151,846


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