STB32NM50N datasheet(5/21 Pages) STMICROELECTRONICS

Nome de Peças	STB32NM50N

Descrição Electrónicos	N-channel 500 V, 0.1 廓 typ., 22 A MDmesh??II Power MOSFET in D짼PAK, TO-220FP, TO-220, TO-247 packages

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STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N

Electrical characteristics

Doc ID 023436 Rev 1

5/21

Table 6.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

-

22

88

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

ISD = 22 A, VGS = 0

-

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 22 A, VDD = 60 V

di/dt=100 A/µs

(see Figure 20)

-

328

5

30.5

ns

nC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 22 A,VDD = 60 V

di/dt=100 A/µs,

TJ = 150 °C

(see Figure 20)

-

392

6.5

32.8

ns

nC

A

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