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2SC4366 Folha de dados(PDF) 2 Page - Hitachi Semiconductor |
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2SC4366 Folha de dados(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 2SC4366 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 60 V Collector to emitter voltage V CEO 50 V Emitter to base voltage V EBO 15 V Collector current I C 300 mA Collector power dissipation P C 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 60 ——V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 50 ——V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 15 ——V I E = 10 µA, IC = 0 Collector cutoff current I CBO —— 1 µAV CB = 50 V, IE = 0 Base to emitter voltage V BE — — 0.75 V V CE = 6 V, IC = 1 mA DC current transfer ratio h FE1 800 — 2000 V CE = 6 V, IC = 100 mA (pulse) h FE2 500 — — V CE = 6 V, IC = 1 mA Collector to emitter saturation voltage V CE(sat) — — 0.3 V I C = 300 mA, IB = 30 mA (pulse) Note: Marking is “ZI–”. |
Nº de peça semelhante - 2SC4366 |
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Descrição semelhante - 2SC4366 |
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