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SI4435DYTRPBF Folha de dados(PDF) 1 Page - International Rectifier |
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SI4435DYTRPBF Folha de dados(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Max. Units VDS Drain- Source Voltage -30 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0 ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -6.4 A IDM Pulsed Drain Current -50 PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 10/14/99 Parameter Max. Units RθJA Maximum Junction-to-Ambient 50 °C/W Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 Si4435DY HEXFET® Power MOSFET These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. VDSS = -30V RDS(on) = 0.020Ω Description l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel PD- 93768A Top View 8 1 2 3 4 5 6 7 D D D G S A D S S SO-8 |
Nº de peça semelhante - SI4435DYTRPBF |
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Descrição semelhante - SI4435DYTRPBF |
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