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2SJ387L Folha de dados(PDF) 1 Page - Hitachi Semiconductor |
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2SJ387L Folha de dados(HTML) 1 Page - Hitachi Semiconductor |
1 / 10 page 2SJ387(L), 2SJ387(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Outline 1 2 3 1 2 3 4 4 DPAK-2 1. Gate 2. Drain 3. Source 4. Drain D G S |
Nº de peça semelhante - 2SJ387L |
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Descrição semelhante - 2SJ387L |
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