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2SJ409S Folha de dados(PDF) 2 Page - Hitachi Semiconductor

Nome de Peças 2SJ409S
Descrição Electrónicos  Silicon P-Channel MOS FET
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Fabricante Electrônico  HITACHI [Hitachi Semiconductor]
Página de início  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ409S Folha de dados(HTML) 2 Page - Hitachi Semiconductor

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2SJ409(L), 2SJ409(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–100
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–20
A
Drain peak current
I
D(pulse)*
1
–80
A
Body to drain diode reverse drain current
I
DR
–20
A
Channel dissipation
Pch*
2
75
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C


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