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2SJ529S Folha de dados(PDF) 5 Page - Hitachi Semiconductor

Nome de Peças 2SJ529S
Descrição Electrónicos  Silicon P Channel MOS FET High Speed Power Switching
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Fabricante Electrônico  HITACHI [Hitachi Semiconductor]
Página de início  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ529S Folha de dados(HTML) 5 Page - Hitachi Semiconductor

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2SJ529(L),2SJ529(S)
5
500
200
100
20
50
10
5
–0.1 –0.2
–1
–5
–10
0
–10
–20
–30
–40
–50
2000
1000
500
200
100
50
0
–20
–40
–60
–80
0
0
–4
–8
–12
–16
–20
–100
816
24
32
40
1000
100
300
30
3
10
1
–0.1 –0.2
–0.5 –1
–2
–5
–10
–0.5
–2
di / dt = 50 A / µs
V
= 0, Ta = 25 °C
GS
20
10
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
DS
V
GS
V
V
= –10 V
–25 V
–50 V
DD
D
I
= –10 A
V
= –10 V
–25 V
–50 V
DD
t f
r
t
d(off)
t
d(on)
t
DD
V
= –10 V, V
= –30 V
Pw = 5 µs, duty < 1 %
GS
Reverse Drain Current
I
(A)
DR
Body–Drain Diode Reverse
Recovery Time
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching Characteristics


Nº de peça semelhante - 2SJ529S

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Renesas Technology Corp
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Renesas Technology Corp
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Descrição semelhante - 2SJ529S

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Hitachi Semiconductor
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2SJ527 HITACHI-2SJ527 Datasheet
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