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2SJ545 Folha de dados(PDF) 2 Page - Hitachi Semiconductor

Nome de Peças 2SJ545
Descrição Electrónicos  Silicon P Channel MOS FET High Speed Power Switching
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Fabricante Electrônico  HITACHI [Hitachi Semiconductor]
Página de início  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ545 Folha de dados(HTML) 2 Page - Hitachi Semiconductor

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2SJ545
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–12
A
Drain peak current
I
D(pulse)
Note1
–48
A
Body-drain diode reverse drain current I
DR
–12
A
Avalenche current
I
AP
Note3
–12
A
Avalenche energy
E
AR
Note3
12
mJ
Channel dissipation
Pch
Note2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100µA, VDS = 0
Zero gate voltege drain current
I
DSS
–10
µAV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
µAV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
0.11
0.15
I
D = –6A, VGS = –10V
Note4
resistance
R
DS(on)
0.16
0.23
I
D = –6A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
58—
S
I
D = –6A, VDS = –10V
Note4
Input capacitance
Ciss
580
pF
V
DS = –10V
Output capacitance
Coss
300
pF
V
GS = 0
Reverse transfer capacitance
Crss
85
pF
f = 1MHz
Turn-on delay time
t
d(on)
10
ns
V
GS = –10V, I D = –6A
Rise time
t
r
55
ns
R
L = 6Ω
Turn-off delay time
t
d(off)
—85
ns
Fall time
t
f
—60
ns
Body–drain diode forward voltage V
DF
–1.2
V
I
F = –12A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
60
ns
I
F = –12A, VGS = 0
diF/ dt = 50A/
µs
Note:
4. Pulse test


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