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STP1013 Folha de dados(PDF) 1 Page - Stanson Technology |
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STP1013 Folha de dados(HTML) 1 Page - Stanson Technology |
1 / 7 page STP1013 Dual P Channel Enhancement Mode MOSFET -0.45A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP1013 2009. V1 DESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other bettery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. PIN CONFIGURATION SOT-523 / SC-89 PART MARKING FEATURE -20V/-0.45A, RDS(ON) =520ohm @VGS =-4.5V -20V/-0.35A, RDS(ON) =700ohm @VGS =-2.5V -20V/-0.25A, RDS(ON) =950ohm @VGS =-1.8V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability SOT-523 / SC89 package design |
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Descrição semelhante - STP1013 |
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