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2SK1340 Folha de dados(PDF) 3 Page - Hitachi Semiconductor |
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2SK1340 Folha de dados(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SK1340 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS 900 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±30 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µAV DS = 720 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) — 3.0 4.0 Ω I D = 3 A, VGS = 10 V * 1 Forward transfer admittance |yfs| 2.0 3.2 — S I D = 3 A, VDS = 20 V * 1 Input capacitance Ciss — 740 — pF V DS = 10 V, VGS = 0, Output capacitance Coss — 305 — pF f = 1 MHz Reverse transfer capacitance Crss — 150 — pF Turn-on delay time t d(on) — 15 — ns I D = 3 A, VGS = 10 V, Rise time t r — 70 — ns R L = 10 Ω Turn-off delay time t d(off) —90 — ns Fall time t f —90 — ns Body to drain diode forward voltage V DF — 0.9 — V I F = 5 A, VGS = 0 Body to drain diode reverse recovery time t rr — 900 — ns I F = 5 A, VGS = 0, di F/dt = 100 A/µs Note: 1. Pulse test |
Nº de peça semelhante - 2SK1340 |
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Descrição semelhante - 2SK1340 |
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