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2SK2393 Folha de dados(PDF) 2 Page - Hitachi Semiconductor

Nome de Peças 2SK2393
Descrição Electrónicos  Silicon N-Channel MOS FET
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Fabricante Electrônico  HITACHI [Hitachi Semiconductor]
Página de início  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK2393 Folha de dados(HTML) 2 Page - Hitachi Semiconductor

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2SK2393
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
1500
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
8A
Drain peak current
I
D(pulse)*
1
20
A
Body to drain diode reverse drain current
I
DR
8A
Channel dissipation
Pch*
2
200
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes
1. PW
≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
1500
V
I
D = 10 mA, VGS = 0*
1
Gate to source leak current
I
GSS
——
±1
µAV
GS = ±20 V, VDS = 0
Zero gate voltage drain current I
DSS
500
µAV
DS = 1200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
4.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
1.9
2.8
I
D = 4 A
V
GS = 15 V*
1
Forward transfer admittance
|y
fs|
1.8
3.0
S
I
D = 4 A
V
DS = 20 V*
1
Input capacitance
Ciss
4370
pF
V
DS = 10 V
Output capacitance
Coss
560
pF
V
GS = 0
Reverse transfer capacitance
Crss
200
pF
f = 1 MHz
Turn-on delay time
t
d(on)
75
ns
I
D = 4 A
Rise time
t
r
180
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
260
ns
R
L = 7.5 Ω
Fall time
t
f
125
ns
Body to drain diode forward
voltage
V
DF
0.9
V
I
F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
6.5
µsI
F = 8 A, VGS = 0,
di
F / dt = 100 A / µs
Note
1. Pulse Test


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